Phase change memory elements having a confined portion of phase change material on a recessed contact
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United States of America Patent
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Sep 28, 2010
Grant Date -
Sep 25, 2008
app pub date -
May 1, 2008
filing date -
Apr 10, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Methods of fabricating phase change memory elements include forming an insulating layer on a semiconductor substrate, forming a through hole penetrating the insulating layer, forming a lower electrode in the through hole and forming a recess having a sidewall comprising a portion of the insulating layer by selectively etching a surface of the lower electrode relative to the insulating layer. A phase change memory layer is formed on the lower electrode. The phase change memory layer has a portion confined by the recess and surrounded by the insulating layer. An upper electrode is formed on the phase change memory layer. Phase change memory elements are also provided.
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