Semiconductor structures including conductive vias continuously extending therethrough and methods of making the same
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United States of America Patent
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Sep 28, 2010
Grant Date -
Jul 31, 2008
app pub date -
Jan 31, 2007
filing date -
Jan 31, 2007
priority date (Note) -
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Abstract
Semiconductor structures are disclosed including a substrate comprising a semiconductor material and having opposed first and second surfaces, and at least one conductive via extending from the first surface to the second surface. The conductive vias can extend at angles relative to the first surface, such as acute angles or 90°. The conductive vias can include segments that extend at different angles. Methods of forming conductive vias in semiconductor structures are provided. In the methods, a thermal gradient is applied in combination with an electric field to form conductive vias.
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