US Patent No: 7,807,478

Number of patents in Portfolio can not be more than 2000

Nonvolatile memory device and fabrication method thereof

ALSO PUBLISHED AS: 20100124810

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Abstract

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A nonvolatile memory device and its fabrication method of the present invention may ensure a margin of the threshold drive voltage during a design process of the device by forming a resistance layer determining phase of ReRAM along an upper edge of a lower electrode, and improve operating characteristics of the device

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Patent Owner(s)

Patent OwnerAddressTotal Patents
HYNIX SEMICONDUCTOR INC.KYOUNGKI-DO6194

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Tae Hoon Daejeon, KR 173 193

Cited Art Landscape

Patent Info (Count) # Cites Year
 
EVERSPIN TECHNOLOGIES, INC. (1)
6,621,730 Magnetic random access memory having a vertical write line 29 2002
 
MACRONIX INTERNATIONAL CO., LTD. (1)
7,619,237 Programmable resistive memory cell with self-forming gap 3 2007
 
SAMSUNG ELECTRONICS CO., LTD. (1)
2006/0170,027 Nonvolatile memory device made of resistance material and method of fabricating the same 32 2005
 
SANDISK 3D LLC (1)
2006/0273,298 Rewriteable memory cell comprising a transistor and resistance-switching material in series 94 2005

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
IMEC (1)
8,206,995 Method for manufacturing a resistive switching memory device and devices obtained thereof 4 2009

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