Phase change memory device and method of forming the same
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United States of America Patent
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Oct 12, 2010
Grant Date -
May 22, 2008
app pub date -
Jun 27, 2007
filing date -
Nov 17, 2006
priority date (Note) -
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Abstract
A phase change memory device includes a current restrictive element interposed between an electrically conductive element and a phase change material. The current restrictive element includes a plurality of overlapping film patterns, each of which having a respective first portion proximal to the conductive element and a second portion proximal to the phase change material. The second portions are configured and dimensioned to have higher resistance than the first portions.
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