Semiconductor device
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United States of America Patent
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Oct 12, 2010
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N/A
app pub date -
Apr 23, 2008
filing date -
Apr 24, 2007
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Abstract
A method of manufacturing a semiconductor device including a PMOS transistor and a NMOS transistor is described. The method facilitates obtaining a FUSI phase of a suitable composition for the NMOS transistor and the PMOS transistor respectively, with fewer mask layers and through a fewer number of manufacturing steps.
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