Selective deposition of silicon-containing films
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United States of America Patent
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Oct 19, 2010
Grant Date -
Oct 19, 2006
app pub date -
Jan 30, 2006
filing date -
Feb 4, 2005
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Abstract
Chemical vapor deposition methods use trisilane and a halogen-containing etchant source (such as chlorine) to selectively deposit Si-containing films over selected regions of mixed substrates. Dopant sources may be intermixed with the trisilane and the etchant source to selectively deposit doped Si-containing films. The selective deposition methods are useful in a variety of applications, such as semiconductor manufacturing.
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