Method of forming a contact in a semiconductor device
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United States of America Patent
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Oct 19, 2010
Grant Date -
May 4, 2006
app pub date -
Oct 24, 2005
filing date -
Oct 25, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Deterioration of yield may be prevented when a contact in a semiconductor device is made by a method including forming a contact hole by selectively removing an insulating layer from a semiconductor substrate, depositing a barrier layer on the insulating layer and on the surface of (or in) the contact hole, depositing an initial tungsten layer on the barrier layer to at least a predetermined thickness, removing particles generated during at least one of the depositing steps, and filling the contact hole with an additional tungsten layer.
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