Photoresist residue remover composition and semiconductor circuit element production process employing the same
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United States of America Patent
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Oct 19, 2010
Grant Date -
Dec 25, 2008
app pub date -
Apr 8, 2008
filing date -
Dec 9, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A photoresist residue remover composition is provided that removes a photoresist residue formed by a resist ashing treatment after dry etching in a step of forming, on a substrate surface, wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the composition including one or two or more types of inorganic acid and one or two or more types of inorganic fluorine compound. There is also provided a process for producing a semiconductor circuit element wherein, in a step of forming wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the photoresist residue remover composition is used for removing a photoresist residue formed by a resist ashing treatment after dry etching.
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