Trench MOSFET structure having improved avalanche capability using three masks process
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United States of America Patent
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Oct 19, 2010
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app pub date -
Jul 8, 2009
filing date -
Jul 8, 2009
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Abstract
A trench MOSFET structure having improved avalanche capability is disclosed, wherein the source region is formed by performing source Ion Implantation through contact open region of a thick contact interlayer, and further diffused to optimize a trade-off between Rds and the avalanche capability. Thus, only three masks are needed in fabrication process, which are trench mask, contact mask and metal mask. Furthermore, said source region has a doping concentration along channel region lower than along contact trench region, and source junction depth along channel region shallower than along contact trench, and source doping profile along surface of epitaxial layer has Gaussian-distribution from trenched source-body contact to channel region.
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