Low temperature fabrication of conductive micro structures
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United States of America Patent
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Oct 26, 2010
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app pub date -
Jun 28, 2006
filing date -
Jun 28, 2006
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Abstract
A method of fabricating a micro structure includes depositing amorphous silicon over a substrate having an electric circuit at a temperature below 550° C. to form a first structure portion, wherein at least part of the first structure portion is configured to receive an electrical signal from the electric circuit.
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