Semiconductor device comprising a thin film transistor comprising a semiconductor thin film and method of manufacturing the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 26, 2010
Grant Date -
Mar 27, 2003
app pub date -
Mar 1, 2000
filing date -
Mar 2, 1999
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
An object of the present invention is to provide a semiconductor device having high operation characteristic and reliability.The measures taken are: A pixel capacitor is formed between an electrode comprising anodic capable material over an organic resin film, an anodic oxide film of the electrode and a pixel electrode above. Since the anodic oxide film is anodically oxidized by applied voltage per unit time at 15 V/min, there is no wrap around on the electrode, and film peeling can be prevented.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully