Metal filled through via structure for providing vertical wafer-to-wafer interconnection
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United States of America Patent
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Oct 26, 2010
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N/A
app pub date -
Jan 9, 2008
filing date -
Jul 25, 2006
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Abstract
A vertical wafer-to-wafer interconnect structure is provided in which a first wafer and a second wafer are mated by way of metal studs that extend from a surface of the first wafer. The metal studs extend from the surface of the first wafer into a corresponding through via of the second wafer. A polyimide coating is present in the through via on mated surfaces of the first and second wafers and on another surface of the second wafer not mated to the first wafer, thus the metal studs provide a continuous metal path from the first wafer through the second wafer. Since only metal studs for the vertical connection are used, no alpha radiation is generated by the metal studs.
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