Method of fabricating an integrated circuit having a memory including a low-k dielectric material
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United States of America Patent
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Nov 2, 2010
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Mar 18, 2008
filing date -
Feb 10, 2005
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Abstract
The present invention includes a memory cell device and method that includes a memory cell, a first electrode, a second electrode, phase-change material and an isolation material. The phase-change material is coupled adjacent the first electrode. The second electrode is coupled adjacent the phase-change material. The isolation material adjacent the phase-change material thermally isolates the phase-change material.
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