Memory cell having improved mechanical stability

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7825398
APP PUB NO 20090251944A1
SERIAL NO

12098556

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Abstract

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Memory cells are described along with methods for manufacturing. A memory cell described herein includes a bottom electrode comprising a base portion and a pillar portion on the base portion, the pillar portion and the base portion having respective outer surfaces and the pillar portion having a width less than that of the base portion. A memory element is on a top surface of the pillar portion of the bottom electrode, and a top electrode is on the memory element. A dielectric spacer contacts the outer surface of the pillar portion, the outer surface of the base portion of the bottom electrode self-aligned with an outer surface of the dielectric spacer.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677 16677

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Yi-Chou Hsinchu, TW 60 3187
Happ, Thomas D Dresden, DE 15 719
Lung, Hsiang-Lan Elmsford, US 320 9851
Philipp, Jan Boris Peekskill, US 99 2858

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