Multi-level phase change memory device and related methods
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United States of America Patent
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Nov 9, 2010
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Jul 7, 2008
filing date -
Jul 12, 2007
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Abstract
Provided are a phase change memory device and a reading method thereof. An example embodiment of a phase change memory device may include main cells programmed to have any one of a plurality of resistance states respectively corresponding to multi-bit data, reference cells programmed to have at least two respectively different resistance states among the resistance states each time the main cells are programmed, and a reference voltage generation circuit sensing the reference cells to generate reference voltages for identifying each of the resistance states.
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