CMP methods avoiding edge erosion and related wafer
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United States of America Patent
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Nov 16, 2010
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app pub date -
Apr 23, 2008
filing date -
Apr 23, 2008
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Abstract
Methods of avoiding chemical mechanical polish (CMP) edge erosion and a related wafer are disclosed. In one embodiment, the method includes providing a wafer; forming a first material across the wafer; forming a second material at an outer edge region of the wafer, leaving a central region of the wafer devoid of the second material; and performing chemical mechanical polishing (CMP) on the wafer. The second material diminishes CMP edge erosion.
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