Optoelectronic semiconductor device in which current spreading layer of sol gel material mixed with nanoparticles is mixed with wavelength conversion dyes
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United States of America Patent
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Nov 23, 2010
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Sep 26, 2006
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Sep 28, 2005
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Abstract
An optoelectronic semiconductor chip comprises a radiation passage area (2d), to which is applied a current spreading layer (4) containing particles (4b) of a wavelength conversion material. Furthermore, a method for producing such a semiconductor chip and also a device comprising such a semiconductor chip are specified.
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