Method for a partially etched capacitor layer including a connection member
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United States of America Patent
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Dec 7, 2010
Grant Date -
Jun 25, 2009
app pub date -
Feb 24, 2009
filing date -
Jul 16, 2004
priority date (Note) -
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Abstract
The present subject matter includes a method that includes joining a first connection member to an unetched connection area, the unetched connection area located on a single major surface of a first planar anode, forming a capacitor stack by aligning the first planar anode with at least a second planar anode, the second planar anode including at least a second connection member, the first connection member and the second connection member for electrical connection of the first planar anode to the second planar anode, aligning the first connection member and the second connection member to define an anode connection surface and joining the first planar anode and the second planar anode.
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