Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
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United States of America Patent
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Dec 7, 2010
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N/A
app pub date -
May 27, 2003
filing date -
Dec 10, 1999
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Abstract
is formed on an inner wall surface of the chamber and on those exposed surface of the members within the chamber and has a high-corrosion resistance and insulating property and, when the process gas is introduced onto a processing surface of a semiconductor wafer and diffused into it, any product is less liable to be deposited on a plasma generation area and on those members held within the chamber.
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