Semiconductor device and manufacturing method of semiconductor device
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United States of America Patent
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Dec 7, 2010
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N/A
app pub date -
Feb 10, 2009
filing date -
Jul 29, 2004
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Abstract
Provided is a nonvolatile semiconductor memory device having a split gate structure, wherein a memory gate is formed over a convex shaped substrate and side surfaces of it is used as a channel. The nonvolatile semiconductor memory device according to the present invention is excellent in read current driving power even if a memory cell is scaled down.
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