Methods and apparatus for engineering an interface between a diffusion barrier layer and a seed layer
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United States of America Patent
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Dec 21, 2010
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N/A
app pub date -
May 24, 2007
filing date -
Jun 22, 2006
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Abstract
layers) without significant agglomeration of copper, with the use of an engineered barrier layer/seed layer interface. The engineered interface includes an adhesion layer, in which copper atoms are physically trapped and are prevented from migrating and agglomerating. The adhesion layer can include between about 20-80% atomic of copper. The copper atoms of the adhesion layer are exposed during deposition of a copper seed layer and serve as the nucleation sites for the deposited copper. Thin, continuous, and conformal seed layers can be deposited on top of the adhesion layer. The trapping of copper within the adhesion layer is achieved by intermixing diffusion barrier and seed layer materials using PVD and/or ALD.
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