Method of and apparatus for inline deposition of materials on a non-planar surface
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United States of America Patent
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Dec 21, 2010
Grant Date -
Nov 13, 2008
app pub date -
May 9, 2007
filing date -
May 9, 2007
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In manufacturing a semiconductor device, a first chamber is provided. An opening couples the first chamber to a first environment through which at least one substrate can pass. A first seal environmentally isolates the first chamber from the first environment. A process chamber is coupled to the first chamber. Another seal environmental isolates the first and the process chambers. The substrate is placed within the first chamber, and the first chamber and the outside environment are isolated. The second opening is opened, and the substrate moves into the semiconductor process chamber. The first chamber is again environmentally isolated from the second volume. A semiconductor processing step is performed on the substrate within the processing chamber. While the substrate is processed, the substrate is rotated and translated through the processing chamber.
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