Integrated circuit, intermediate structure and a method of fabricating a semiconductor structure
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United States of America Patent
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Dec 28, 2010
Grant Date -
Jan 1, 2009
app pub date -
Jun 29, 2007
filing date -
Jun 29, 2007
priority date (Note) -
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Abstract
In a method of fabricating a semiconductor structure, a carbon containing mask is fabricated over a dielectric layer. The mask exposes the surface of the dielectric layer at least partly in a region between two adjacent conducting lines. A contact hole is etched into the dielectric layer in the region between the two adjacent conducting lines.
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