Memory device with multiple capacitor types
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United States of America Patent
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Dec 28, 2010
Grant Date -
Mar 4, 2010
app pub date -
Aug 28, 2008
filing date -
Aug 28, 2008
priority date (Note) -
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Abstract
An integrated circuit includes a memory array portion and a support circuitry portion arranged on a semiconductor substrate. An insulative layer is formed on the semiconductor substrate. Data storage capacitors are located in the memory array portion and extending through the insulative layer. Non-data storage capacitors are located in the support circuitry portion and terminating above the insulative layer.
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