Iterative memory cell charging based on reference cell value

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United States of America Patent

PATENT NO 7859908
SERIAL NO

12469604

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Abstract

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Systems and methods, including computer software for writing to a memory device include applying charge to each of multiple memory cells for storage of a selected data value in each memory cell. The memory cells include a first reference memory cell, and each data value is selected from a group of possible data values. Each possible data value has a corresponding target voltage level, and the first reference memory cell has a corresponding predetermined first reference target voltage level. The voltage level in the first reference memory cell is detected. A determination is made whether the voltage level in the first reference memory cell is less than the first reference target voltage level. Additional charge is applied to the memory cells upon the determination that the voltage level in the first reference memory cell is less than the first reference target voltage.

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Patent Owner(s)

Patent OwnerAddress
APPLE INCONE APPLE PARK WAY CUPERTINO CA 95014

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cornwell, Michael J San Jose, US 81 2387
Dudte, Christopher P San Jose, US 68 2313

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