US Patent No: 7,859,929

Number of patents in Portfolio can not be more than 2000

Sense amplifiers

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Abstract

Sense logic, and associated signaling, for dynamic thyristor-based memory cells is described. A first supply voltage level is greater than a second supply voltage level. In an embodiment, cross-coupled inverters of a sense amplifier are operatively coupled between a ground node and the second supply for sensing voltage. The first supply voltage is pass gate coupled to a first sense node and a second sense node. The pass gating is responsive to sample signaling. A first supply transistor is gated by a transfer bus. A second supply transistor is gated by a sense reference voltage that is between the first supply voltage level and the second supply voltage level. Each of the first supply transistor and the second supply transistor is back body biased with a write voltage level that is between the second supply voltage level and the ground voltage level.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
T-RAM SEMICONDUCTOR, INC.SAN JOSE, CA4

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Roy, Richard - 2 0

Cited Art

Patent Info (Count) # Cites Year
 
MICRON TECHNOLOGY, INC. (28)
6,940,772 Reference cells for TCCT based memory cells 13 2002
6,611,452 Reference cells for TCCT based memory cells 40 2002
6,785,169 Memory cell error recovery 40 2002
6,804,162 Read-modify-write memory using read-or-write banks 20 2002
6,781,888 Reference cells for TCCT based memory cells 21 2002
6,778,435 Memory architecture for TCCT-based memory cells 15 2002
6,721,220 Bit line control and sense amplification for TCCT-based memory cells 12 2002
6,958,931 Bit line control and sense amplification for TCCT-based memory cells 15 2002
6,903,987 Single data line sensing scheme for TCCT-based memory cells 17 2002
6,735,113 Circuit and method for implementing a write operation with TCCT-based memory cells 17 2002
7,187,530 Electrostatic discharge protection circuit 8 2003
6,756,838 Charge pump based voltage regulator with smart power regulation 22 2003
6,734,815 Geometric D/A converter for a delay-locked loop 11 2003
6,937,085 Sense amplifier based voltage comparator 11 2003
6,891,774 Delay line and output clock generator using same 17 2003
6,947,349 Apparatus and method for producing an output clock pulse and output clock generator using same 11 2003
7,089,439 Architecture and method for output clock generation on a high speed memory device 6 2003
7,464,282 Apparatus and method for producing dummy data and output clock generator using same 4 2003
6,885,581 Dynamic data restore in thyristor-based memory device 39 2003
6,944,051 Data restore in thryistor based memory devices 18 2003
7,304,327 Thyristor circuit and approach for temperature stability 7 2003
7,054,191 Method and system for writing data to memory cells 5 2004
7,096,144 Digital signal sampler 6 2004
7,268,373 Thyristor-based memory and its method of operation 9 2004
7,573,077 Thyristor-based semiconductor memory device with back-gate bias 7 2005
7,460,395 Thyristor-based semiconductor memory and memory array with data refresh 7 2005
7,319,622 Bitline shielding for thyristor-based memory 5 2005
7,379,381 State maintenance pulsing for a memory device 4 2005
 
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (1)
6,201,418 Differential sense amplifier with reduced hold time 15 1998

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