Atomic layer deposition apparatus
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United States of America Patent
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Dec 28, 2010
Grant Date -
Apr 22, 2010
app pub date -
Dec 23, 2009
filing date -
Jul 27, 2001
priority date (Note) -
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Abstract
A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.
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