Transistor for active matrix display and a method for producing said transistor
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United States of America Patent
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Jan 4, 2011
Grant Date -
Oct 26, 2006
app pub date -
Feb 6, 2004
filing date -
Feb 6, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A transistor for active matrix display and a method for producing the transistor (1). The transistor (1) includes a microcrystalline silicon film (5) and an insulator (3). The crystalline fraction of the microcrystalline silicon film (5) is above 80%. According to the invention, the transistor (1) includes a plasma treated interface (4) located between the insulator (3) and the microcrystalline silicon film (5) so that the transistor (1) has a linear mobility equal or superior to 1.5 cm2V-1s-1, shows threshold voltage stability and wherein the microcrystalline silicon film (5) includes grains (6) whose size ranges between 10 nm and 400 nm. The invention concerns as well a display unit having a line-column matrix of pixels that are actively addressed, each pixel comprising at least a transistor as described above.
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