Epitaxial deposition of doped semiconductor materials
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United States of America Patent
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Jan 4, 2011
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app pub date -
Dec 22, 2006
filing date -
Dec 22, 2005
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Abstract
A method for depositing a carbon doped epitaxial semiconductor layer comprises maintaining a pressure of greater than about 700 torr in a process chamber housing a patterned substrate having exposed single crystal material. The method further comprises providing a flow of a silicon source gas to the process chamber. The silicon source gas comprises dichlorosilane. The method further comprises providing a flow of a carbon precursor to the process chamber. The method further comprises selectively depositing the carbon doped epitaxial semiconductor layer on the exposed single crystal material.
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