Method for fabricating last level copper-to-C4 connection with interfacial cap structure
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 4, 2011
Grant Date -
Jul 19, 2007
app pub date -
Jan 18, 2006
filing date -
Jan 18, 2006
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The present invention relates to a method for fabricating a semiconductor device with a last level copper-to-C4 connection that is essentially free of aluminum. Specifically, the last level copper-to-C4 connection comprises an interfacial cap structure containing CoWP, NiMoP, NiMoB, NiReP, NiWP, and combinations thereof. Preferably, the interfacial cap structure comprises at least one CoWP layer. Such a CoWP layer can be readily formed over a last level copper interconnect by a selective electroless plating process.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully