System and method for forming an integrated barrier layer

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United States of America Patent

PATENT NO 7867914
SERIAL NO

11770735

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Abstract

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An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory metal layer. The integrated barrier layer is formed using a dual-mode deposition process comprising a chemical vapor deposition (CVD) step and a cyclical deposition step. The dual-mode deposition process may be performed in a single process chamber.

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Patent Owner(s)

Patent OwnerAddress
APPLIED MATERIALS INC3050 BOWERS AVENUE SANTA CLARA CA 95054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Xi, Ming Palo Alto, US 101 11215
Yang, Michael Palo Alto, US 143 5380
Zhang, Hui Santa Clara, US 899 8264

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