Embedded memory in a CMOS circuit and methods of forming the same
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United States of America Patent
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Jan 11, 2011
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app pub date -
Jan 31, 2007
filing date -
Jan 31, 2007
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Abstract
In some aspects, a memory circuit is provided that includes (1) a two-terminal memory element formed on a substrate; and (2) a CMOS transistor formed on the substrate and adapted to program the two-terminal memory element. The two-terminal memory element is formed between a gate layer and a first metal layer of the memory circuit. Numerous other aspects are provided.
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