Methods of forming back side layers for thinned wafers
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United States of America Patent
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Jan 18, 2011
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N/A
app pub date -
Jan 10, 2007
filing date -
Jan 11, 2006
priority date (Note) -
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Abstract
A method of processing a wafer including a plurality of integrated circuit devices on a front side of the wafer, may include thinning the wafer from a back side opposite the front side. After thinning the wafer, a back side layer may be provided on the back side of the thinned wafer opposite the front side, and the back side layer may be configured to counter stress on the front side of the wafer including the plurality of integrated circuit devices thereon. After providing the back side layer, the plurality of integrated circuit devices may be separated. Related structures are also discussed.
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