Semiconductor structure having an enlarged finger shaped region for reducing electric field density and method of manufacturing the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 25, 2011
Issued Date -
N/A
app pub date -
Feb 16, 2009
filing date -
Feb 16, 2009
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The invention provides a semiconductor structure. A first type body doped region is deposited on a first type substrate. A first type heavily-doped region having a finger portion with an enlarged end region is deposited on the first type body doped region. A second type well region is deposited on the first type substrate. A second type heavily-doped region is deposited on the second type well region. An isolation structure is deposited between the first type heavily-doped region and the second type heavily-doped region. A gate structure is deposited on the first type substrate between the first type heavily-doped region and the isolation structure.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully