Method for manufacturing semiconductor optical device

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Feb 1, 2011
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Jul 2, 2007
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Jul 21, 2006

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Abstract

film, using the second resist pattern as a mask, to expose the top surface of the p-GaN layer in the waveguide ridge; and forming an electrode layer on the top surface of the p-GaN layer.

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Patent Owner	Address
MITSUBISHI ELECTRIC CORPORATION	7-3 MARUNOUCHI 2-CHOME CHIYODA-KU TOKYO 100-8310

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
Sakuma, Hitoshi	Tokyo, JP	54	282
Shiga, Toshihiko	Tokyo, JP	16	123

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Method for manufacturing semiconductor optical device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

11772297

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US Family Size	Non-US Coverage
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DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
February 01, 2011	US,7879635,B2 US7879635B2	GRANTED PATENT AS SECOND PUBLICATION
January 24, 2008	US,20080020502,A1 US20080020502A1	FIRST PUBLISHED PATENT APPLICATION

PATENT NO	7879635
SERIAL NO	11772297
DOCKET NO

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11772297

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