Solid-state sensor and manufacturing method thereof
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United States of America Patent
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Feb 1, 2011
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N/A
app pub date -
Jun 15, 2007
filing date -
Jun 15, 2006
priority date (Note) -
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Abstract
A sensor having photodiodes whose sensitivity and storage capacity can be increased is provided. The sensor is formed by arranging the photodiodes in an array with first region of second conductivity type is formed on the principal surface of a substrate of a first conductivity type. A pixel separating region of the first conductivity type is formed to penetrate through the first semiconductor region to separate the regions of the adjacent photodiodes. A second region of the second conductivity type used to drain excess charge is formed in substrate at a position away from the junction surface between substrate and the first region and below the junction surface.
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