Methods of enhancing performance of field-effect transistors and field-effect transistors made thereby
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United States of America Patent
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Feb 1, 2011
Grant Date -
Sep 3, 2009
app pub date -
Feb 26, 2009
filing date -
Feb 28, 2008
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Abstract
Methods of enhancing the performance of a field-effect transistor (FET) by providing a percolating network of metallic islands to the inversion layer of the FET so as to effectively reduce the channel length of the FET. The metal islands can be provided in a number of ways, including Volmer-Weber metallic film growth, breaking apart continuous metallic film, patterning metallic coating, dispersing metallic particles in a semiconducting material, applying a layer of composite particles having metallic cores and semiconducting shells and co-sputtering metallic and semiconducting materials, among others. FETs made using disclosed methods have a novel channel structures that include metallic islands spaced apart by semiconducting material.
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