Programmable resistive memory cell with self-forming gap
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United States of America Patent
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Feb 1, 2011
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Oct 8, 2009
filing date -
Feb 21, 2007
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Abstract
A memory device has a first electrode, a second electrode, and memory material defining an inter-electrode current path between the first electrode and the second electrode. A gap is formed by shrinkage of the shrinkable material between the memory material and a shrinkable material next to the memory material.
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