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Abstract

A method for forming an epitaxial layer in a capacitor over interconnect structure, includes selecting a laser having a suitable wavelength for absorption at a seeding layer/annealing layer interface of the capacitor over interconnect structure, and directing laser energy from the selected laser at the capacitor over interconnect structure. The laser energy anneals a feature of the capacitor over interconnect structure to form an epitaxial layer. The annealing is accomplished at a temperature below about 450° C. The selected laser can be an excimer laser using a pulse extender. The capacitor over interconnect structure can be a ferroelectric capacitor formed over a conventional CMOS structure.

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First Claim