Phase-change TaN resistor based triple-state/multi-state read only memory
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United States of America Patent
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Feb 1, 2011
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Apr 24, 2008
filing date -
Jul 29, 2005
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Abstract
The present invention relates to a nonvolatile memory such as, for example a ROM or an EPROM, in which the information density of the memory is increased relative to a conventional nonvolatile memory that includes two logic state devices. Specifically, the nonvolatile memory of the present invention includes a SiN/TaN/SiN thin film resistor embedded within a material having a thermal conductivity of about 1 W/m-K or less; and a non-linear Si-containing device coupled to the resistor. Read and write circuits and operations are also provided in the present application.
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