Semiconductor device and fabricating method thereof
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United States of America Patent
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Feb 1, 2011
Grant Date -
Feb 28, 2008
app pub date -
Jul 31, 2007
filing date -
Aug 23, 2006
priority date (Note) -
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Abstract
A semiconductor device that allows an image sensor (in an upper area of a SiP semiconductor device) to exchange signals with a device in a lower area of a SiP semiconductor device. A semiconductor device includes at least one of: A semiconductor substrate having a photodiode area and a transistor area. A PMD (Pre Metal Dielectric) layer formed on and/or over the semiconductor substrate. At least one metal layers formed on and/or over the PMD layer. A first penetrating electrode penetrating the PMD layer and the at least one metal layers. A second penetrating electrode penetrating the semiconductor substrate and connected to the first penetrating electrode.
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