Increased switching cycle resistive memory element
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United States of America Patent
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Feb 1, 2011
Grant Date -
Jan 29, 2009
app pub date -
Jul 24, 2007
filing date -
Jul 24, 2007
priority date (Note) -
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Abstract
An integrated circuit including a resistive memory element and a method of manufacturing the integrated circuit are described. The method of manufacturing the integrated circuit includes depositing a switching layer material and intentionally forming inhomogeneously distributed defects within the switching layer material to increase a number of switching cycles of the resistive memory element. The resistive memory element includes a switching layer that selectively switches between a low resistance state and a high resistance state. The switching layer contains intentionally formed defects that increase the number of switching cycles of the switching layer.
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