Embedded memory in a CMOS circuit and methods of forming the same
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United States of America Patent
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Feb 15, 2011
Grant Date -
Jul 31, 2008
app pub date -
Jan 31, 2007
filing date -
Jan 31, 2007
priority date (Note) -
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Abstract
In some aspects, a method of forming a memory circuit is provided that includes (1) forming a two-terminal memory element on a substrate between a gate layer and a first metal layer of the memory circuit; and (2) forming a CMOS transistor on the substrate, the CMOS transistor for programming the two-terminal memory element. Numerous other aspects are provided.
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