Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions
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United States of America Patent
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Feb 15, 2011
Grant Date -
Dec 25, 2008
app pub date -
Aug 22, 2008
filing date -
May 13, 2005
priority date (Note) -
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Abstract
The present invention relates to a Tunnel Field Effect Transistor (TFET), which utilizes angle implantation and amorphization to form asymmetric source and drain regions. The TFET further includes a silicon germanium alloy epitaxial source region with a conductivity opposite that of the drain.
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