Gated diode nonvolatile memory process
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United States of America Patent
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Feb 15, 2011
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N/A
app pub date -
Oct 24, 2007
filing date -
Dec 9, 2005
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Abstract
A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal. Example embodiments include the individual memory cell, an array of such memory cells, methods of operating the memory cell or array of memory cells, and methods of manufacturing the same.
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