CMOS fabrication process utilizing special transistor orientation
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United States of America Patent
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Feb 15, 2011
Grant Date -
Feb 14, 2008
app pub date -
Oct 17, 2007
filing date -
Nov 29, 2000
priority date (Note) -
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Abstract
Complementary metal oxide semiconductor transistors are formed on a silicon substrate. The substrate has a {100} crystallographic orientation. The transistors are formed on the substrate so that current flows in the channels of the transistors are parallel to the <100> direction. Additionally, longitudinal tensile stress is applied to the channels.
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