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Abstract

A memory device includes bottom and top electrode structures and a memory cell therebetween. The memory cell comprises bottom and top memory elements and a dielectric element therebetween. A lower resistance conduction path is formed through the dielectric element. The dielectric element may have an outer edge and a central portion, the outer edge being thicker than the central portion. To make a memory device, an electrical pulse is applied through the memory cell to form a conduction path through the dielectric element. A passivation element may be formed by oxidizing the outer surface of the memory cell which may also enlarge the outer edge of the dielectric element.

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First Claim