Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices
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United States of America Patent
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Mar 1, 2011
Grant Date -
Jul 17, 2008
app pub date -
Mar 19, 2008
filing date -
Mar 3, 2003
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Abstract
Monolithic electronic device including a common nitride epitaxial layer are provided. A first type of nitride device is provided on the common nitride epitaxial layer including a first at least one implanted n-type region on the common nitride epitaxial layer. The first at least one implanted n-type region has a first doping concentration greater than a doping concentration of the common nitride epitaxial layer. A second type of nitride device, different from the first, including a second at least one implanted n-type region is provided on the common nitride epitaxial layer. The second at least one implanted n-type region is different from the first at least one implanted n-type region and has a second doping concentration that is greater than the doping concentration of the common nitride epitaxial layer. First and second pluralities of contacts respectively define first and second electronic devices on the common nitride epitaxial layer.
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