Method for angular doping of source and drain regions for odd and even NAND blocks
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 8, 2011
Grant Date -
Nov 25, 2010
app pub date -
Jul 13, 2010
filing date -
Sep 28, 2004
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method for creating NAND flash memory. Source implantations are performed at a first implantation angle to areas between stacked gate structures of a NAND string. Drain implantations are performed at a second implantation angle to areas between the stacked gate structures. The implantations can dope a source line area while not doping a bit line contact area, and providing an additional implantation for the bit line contact area, or dope the bit line contact area while not doping the source line area, followed by an additional implantation for the source line area, or dope neither the source line area nor the bit line contact area, followed by additional implantations for the source line area and the bit line contact area.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully