Method of forming a layer on a semiconductor substrate
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United States of America Patent
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Mar 8, 2011
Grant Date -
Jan 8, 2009
app pub date -
Sep 17, 2008
filing date -
Jul 5, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a method of forming a thin layer for a semiconductor device through an ALD process and a CVD process in the same chamber, a semiconductor substrate is introduced into a processing chamber, and an interval between a showerhead and the substrate is adjusted to a first gap distance. A first layer is formed on the substrate at a first temperature through an ALD process. The interval between the showerhead and the substrate is additionally adjusted to a second gap distance, and a second layer is formed on the first layer at a second temperature through a CVD process. Accordingly, the thin layer has good current characteristics, and the manufacturing throughput of a semiconductor device is improved.
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